Consider the assertions S1,S2,S3 & S4

S1 : SiO2  acts as an isolation layer between the junctions in IC fabrication process

S2 : SiO2  acts as an isolation equipment/ material  between the  different devices

S3: SiO2   acts as a passivation layer by preventing undesired impurities over the silicon surface.

S4 : SiO2  acts  as a di-electric between poly-silicon gate and the channel of semiconductor

Which among them is/ are precise functions of silicon dioxide in an ion implantation  process?(Marks : 01)

a. S1: Correct, S2: Correct, S3:Correct , S4: Correct

b. S1: Correct, S2: Incorrect, S3: Correct , S4 : Correct

c. S1: Correct, S2: Correct, S3 :Incorrect , S4 : Correct

d. S1: Correct, S2: Correct, S3 : Correct, S4 : Incorrect

ANSWER: S1: Correct, S2: Correct, S3:Correct , S4: Correct

Explanation:

SiO2 performs the major functions associated with an ion implantation process in IC fabrication process. It serves to be a dielectric, isolation as well as passivation layer depending upon the type of application.

It also allows the precise doping level of windows between SiO2 with greater proficiency at ion implantation process.