Consider the below mentioned assertions :

A1 : Increase in doping level of p-type moves EF towards the centre

A2 : Increase in doping level of p-type moves EF away from the centre

A3: Increase in doping level of p-type results in downward shifting in EF

A4 : Increase in doping level of p-type results in an upward shifting in EF

Which among them is/are correct in accordance to the existence of fermi-level effect in P-type semiconductor?

(Marks : 02)

a. A1 & A3

b. A2 & A4

c. A1 & A4

d. A2 & A3

ANSWER: A1 & A3

Explanation:

Fermi-Level in P-type semiconductor occurs exactly above the acceptor energy level. However, by increasing the addition of impurity during the existence of Fermi-level effect results in the downward shifting of p-type in fermi-level energy (EF) .Besides these, it also moves towards the centre with the rise in temperature level.