Consider the below mentioned statements.

A1. Reduction in channel width & cross-sectional area

A2. Reduction in current density of channel

Which among them are the possible consequences in JFET upon the application of drain-to-source voltage (VDS)? (Marks : 02)

a. Only A1 is true

b. Both A1 & A2 are true but A2 is not a reason for A1

c. Both A1 & A2 are true but A2 is a reason for A1

d. Both A1 & A2 are false

ANSWER: Only A1 is true

Explanation:

JFET comprises a wedge-shaped channel & gate to source operates only under the revere biased condition. The reverse biasing of gate to source junction increases the input resistance of JFET.

Hence, the channel width cross-sectional area get reduced upon the application of drain to source voltage. This ultimately increases the channel current density.